?2002 fairchild semiconductor corporation rev. b, june 2002 fqpf5n60 qfet tm fqpf5n60 600v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply. features ? 2.8a, 600v, r ds(on) = 2.0 ? @v gs = 10 v ? low gate charge ( typical 16 nc) ? low crss ( typical 9.0 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? to-220f package isolation = 4.0kv (note 6) absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqpf5n60 units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.8 a - continuous (t c = 100c) 1.77 a i dm drain current - pulsed (note 1) 11.2 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) 2.8 a e ar repetitive avalanche energy (note 1) 4.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 40 w - derate above 25c 0.32 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 3.13 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w ! " ! ! ! " " " ! " ! ! ! " " " s d g to-220f fqpf series gs d
rev. b, june 2002 fqpf5n60 ?2002 fairchild semiconductor corporation (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 70mh, i as = 2.8a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 5.0a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature 6. only for back side in v iso = 4.0kv and t = 0.3s symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.4 a -- 1.57 2.0 ? g fs forward transconductance v ds = 50 v, i d = 1.4 a -- 3.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 560 730 pf c oss output capacitance -- 80 100 pf c rss reverse transfer capacitance -- 9 12 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 5.0 a, r g = 25 ? -- 13 35 ns t r turn-on rise time -- 45 100 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 40 90 ns q g total gate charge v ds = 480 v, i d = 5.0 a, v gs = 10 v -- 16 20 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 7.8 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2.8 a i sm maximum pulsed drain-source diode forward current -- -- 11.2 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.8 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 5.0 a, di f / dt = 100 a/ s -- 270 -- ns q rr reverse recovery charge -- 1.9 -- c
?2002 fairchild semiconductor corporation rev. b, june 2002 fqpf5n60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 246810 10 -1 10 0 10 1 notes : 1. v ds = 50v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 notes : 1. 250 s pulse test 2. t c = 25 v gs top : 15 v 10 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d , drain current [a] v ds , drain-source voltage [v] 0369121518 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 5.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 0 1 2 3 4 5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
?2002 fairchild semiconductor corporation rev. b, june 2002 fqpf5n60 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 " n o tes : 1 . z % jc (t) = 3.13 ! /w m a x. 2 . d uty f acto r, d = t 1 /t 2 3 . t jm - t c = p dm * z % jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z % jc (t), therm al response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current [a] t c , case temperature [ ! ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) " notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 " notes : 1. v gs = 10 v 2. i d = 2.5 a r ds( on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 " notes : 1. v gs = 0 v 2. i d = 250 # a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
?2002 fairchild semiconductor corporation rev. b, june 2002 fqpf5n60 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p
?2002 fairchild semiconductor corporation rev. b, june 2002 fqpf5n60 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
rev. b, june 2002 ?2002 fairchild semiconductor corporation fqpf5n60 dimensions in millimeters package dimensions (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f
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